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Magnetic properties of low-moment ferrimagnetic Heusler Cr2CoGa thin films grown by molecular beam epitaxy

机译:低瞬间亚铁磁性Heusler Cr2CoGa薄膜的磁性   通过分子束外延生长的薄膜

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摘要

Recently, theorists have predicted many materials with a low magnetic momentand large spin-polarization for spintronic applications. These compounds arepredicted to form in the inverse Heusler structure, however, many of thesecompounds have been found to phase segregate. In this study, ordered Cr2CoGathin films were synthesized without phase segregation using molecular beamepitaxy. The present as-grown films exhibit a low magnetic moment fromantiferromagnetically coupled Cr and Co atoms as measured with SQUIDmagnetometry and soft X-ray magnetic circular dichroism. Electricalmeasurements demonstrated a thermally-activated semiconductor-like resistivitywith an activation energy of 87 meV. These results confirm spin gaplesssemiconducting behavior, which makes these thin films well positioned forfuture devices.
机译:最近,理论家已经预测了许多具有低磁矩和大自旋极化的材料用于自旋电子学。预计这些化合物会形成逆Heusler结构,但是,发现其中许多化合物都是相分离的。在这项研究中,使用分子束外延法合成了有序的Cr2CoGathin薄膜,没有相分离。如通过SQUID磁力测定法和软X射线磁性圆二色性所测量的,本发明的成膜薄膜表现出来自反铁磁耦合的Cr和Co原子的低磁矩。电学测量显示出热活化的类半导体电阻率,其活化能为87 meV。这些结果证实了自旋无间隙半导体行为,这使得这些薄膜很好地定位于未来的器件。

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